High resistivity In-doped ZnTe: electrical and optical properties

Bose, D. N. ; Bhunia, S. (2005) High resistivity In-doped ZnTe: electrical and optical properties Bulletin of Materials Science, 28 (7). pp. 647-650. ISSN 0250-4707

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Official URL: http://www.ias.ac.in/matersci/bmsdec2005/647.pdf

Related URL: http://dx.doi.org/10.1007/BF02708533


Semi-insulating <111> ZnTe prepared by In doping during Bridgman growth was found to have a resistivity of 5.74 × 107 ohm-cm, the highest reported so far in ZnTe, with hole concentration of 2.4 × 109/cm3 and hole mobility of 46 cm2 / V.s at 300 K. The optical band gap was 2.06 eV at 293 K compared with 2.26 eV for undoped semiconducting ZnTe. Thermally stimulated current (TSC) studies revealed 2 trap levels at depths of 202-222 meV and 412-419 meV, respectively. Photoluminescence (PL) studies at 10 K showed strong peaks at 1.37 eV and 1.03 eV with a weak shoulder at 1.43 eV. Short anneal for 3 min at 250° C led to conversion to a p-type material with resistivity, 14.5 ohm-cm, indicating metastable behaviour. Raman studies carried out on undoped and In-doped samples showed small but significant differences. Possible models for semi-insulating behaviour and meta-stability are proposed.

Item Type:Article
Source:Copyright of this article belongs to Indian Academy of Sciences.
Keywords:II-VI Compound ; ZnTe
ID Code:5900
Deposited On:19 Oct 2010 10:20
Last Modified:16 May 2016 16:20

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