Bose, D. N. ; Roy, J. N. ; Basu, S. (1984) Improved schottky barrier on n-InP by surface modification Materials Letters, 2 (5). pp. 455-457. ISSN 0167-577X
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/016757...
Related URL: http://dx.doi.org/10.1016/0167-577X(84)90162-9
Abstract
Modification of the surface of InP by ruthenium treatment increases the Schottky barrier height of Ag/n-InP junctions from 0.58 to 0.75 eV. The ideality factor n is found to decrease from 2.06 to 1.20, J0 from 4.8 × 10-6 to 1.47 × 10-7 A/cm2 and A from 22.2 to 8.6 A cm-2 K-2.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Materials Research Society. |
| ID Code: | 5886 |
| Deposited On: | 19 Oct 2010 10:22 |
| Last Modified: | 23 May 2011 04:19 |
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