Pulsed laser deposition of ZnTe thin films

Bhumia, S. ; Bhattacharya, P. ; Bose, D. N. (1996) Pulsed laser deposition of ZnTe thin films Materials Letters, 27 (6). pp. 307-311. ISSN 0167-577X

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/016757...

Related URL: http://dx.doi.org/10.1016/0167-577X(96)00009-2


Thin films of ZnTe were deposited on glass and Si by pulsed laser ablation at substrate temperatures of 26°C and 286 °C. X-ray diffraction studies showed that films deposited at 26 °C were amorphous and those deposited at 286 °C were polycrystalline. X-ray photoelectron spectroscopy (XPS) showed the Zn: Te ratio to be 49.1: 50.9 for both types of films. The band gap of the films deposited at 286 °C was 2.2 eV. The conductivity of the films was 1.09 × 10-3 Ω-1 cm-1 and 2.59 × 10-6 Ω-1 cm-1 respectively at 300 K. The variation of conductivity with temperature and the properties of ZnTe/Si heterojunctions were also studied.

Item Type:Article
Source:Copyright of this article belongs to Materials Research Society.
Keywords:Thin Film; Semiconductor; Laser; Substrate Temperature; Heterojunction; Silicon; Glass Substrates
ID Code:5864
Deposited On:19 Oct 2010 10:25
Last Modified:20 May 2011 05:35

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