Magnetic and transport properties, and electronic structure of the layered chalcogenide AgCrSe2

Gautam, Ujjal K. ; Seshadri, Ram ; Vasudevan, S. ; Maignan, A. (2002) Magnetic and transport properties, and electronic structure of the layered chalcogenide AgCrSe2 Solid State Communications, 122 (11). pp. 607-612. ISSN 0038-1098

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Official URL: http://www.sciencedirect.com/science/article/pii/S...

Related URL: http://dx.doi.org/10.1016/S0038-1098(02)00226-0

Abstract

We report a detailed study of the magnetic and transport properties of polycrystalline AgCrSe2, a layered magnetic chalcogenide that orders antiferromagnetically without frustration at 55 K. The magnetic ordering corresponds to in-plane ferromagnetic interactions with antiferromagnetic coupling between the planes. Transport studies suggest a semiconductor that is at the I-M transition boundary in terms of its resistivity, with variable-range hopping behavior at intermediate temperatures and Efros-Shklovskii hopping at low temperatures. At high temperatures (>340 K) the temperature coefficient of resistance turns positive as a result, we believe, of disorder in the silver sub-lattice. First principles density functional calculations of the electronic structure suggest a magnetic insulator ground state, and means to tune the system to ferromagnetic half-metal.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:AgCrSe2; Antiferromagnetics; Magnetic Semiconductors; Low-dimensional Electronic Structure
ID Code:58468
Deposited On:31 Aug 2011 06:04
Last Modified:31 Aug 2011 06:04

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