Laser annealing of phosphorus-implanted CdTe

Bhattacharya, P. ; Banerjee, A. ; Chatterjee, A. P. ; Bose, D. N. (1990) Laser annealing of phosphorus-implanted CdTe Materials Science and Engineering: B, 5 (4). L1-L3. ISSN 0921-5107

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Single crystals of p-CdTe were implanted with phosphorus ions (100 keV, fluence of 1014 ions cm-2). Pulsed ruby laser annealing was carried out at energy densities of 1.9-3.2 J cm-2 and compared with thermal annealing for 1 h at 300° C. Resistivity measurements showed that laser annealing produced significantly lower resistivity than thermal annealing, the lowest resistivity of 1.95 Ω cm being obtained at 1.9 J cm-2. Scanning electron micrographs showed better morphology with laser annealing.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:5814
Deposited On:19 Oct 2010 10:51
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