Effective techniques for reduction of silicon impurity in chloride vapor phase epitaxial growth of GaInAs

Pal, R. ; Dhaul, A. ; Agarwal, S. K. ; Pal, D. ; Bose, D. N. (1998) Effective techniques for reduction of silicon impurity in chloride vapor phase epitaxial growth of GaInAs Materials Research Bulletin, 33 (2). pp. 261-267. ISSN 0025-5408

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00255...

Related URL: http://dx.doi.org/10.1016/S0025-5408(97)00224-9

Abstract

Reduction of unintentional silicon impurity in GaInAs was obtained by using a SiC-coated graphite boat containing Ga-In source alloy materials. A maximum mobility of 2800 cm2/(V·s) and a carrier concentration of 1.4 × 1018 cm-3 were obtained at room temperature with a quartz boat. The addition of a small amount of dysprosium as a gettering material resulted in reducing the background concentration and also the mobility. However, use of a SiC-coated graphite boat resulted in an increase of the room temperature mobility to 5100 cm2/(V·s) and a decrease in carrier concentration to 2.8 × 1016 cm-3.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:A. Alloys; A. Metals; A. Semiconductors; B. Epitaxial Growth; B. Vapor Deposition
ID Code:5811
Deposited On:19 Oct 2010 10:52
Last Modified:19 May 2011 12:02

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