Thermal quenching of luminescence in erbium doped semiconductors

Chanda, B. ; Bose, D. N. (1997) Thermal quenching of luminescence in erbium doped semiconductors Pramana - Journal of Physics, 48 (6). pp. 1145-1149. ISSN 0304-4289

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The nature of the temperature dependence of luminescence intensity from Er+ ions in GaInAsP, Si, InP, GaAs, AlGaAs, ZnTe, as observed by Favennecet al [1] has been examined in terms of a double exponential model. The smaller activation energy is found to be 58-100 meV, characteristic of a localized energy barrier at the Er+ centre while the higher activation energy is approximately 0.8E g attributed to an Auger non-radiative process of carrier excitation into bands. This model has been found to describe the observed temperature dependences with reasonably good agreement.

Item Type:Article
Source:Copyright of this article belongs to Indian Academy of Sciences.
Keywords:Luminescence; Rare Earths; Semiconductors
ID Code:5806
Deposited On:19 Oct 2010 10:53
Last Modified:16 May 2016 16:15

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