Photoluminescence and heavy doping effects in InP

Bendapudi, Seishu ; Bose, D. N. (1990) Photoluminescence and heavy doping effects in InP Bulletin of Materials Science, 13 (1-2). pp. 75-82. ISSN 0250-4707

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Photoluminescence (PL) studies on LPE-grown InP layers doped with selenium and having carrier concentrations from 1 × 1018 to 1 × 1020 cm-3 have been reported in this paper. Measurements at 300 and 77 K showed that the band to band recombination peak energy shifts to values as high as 1.7 eV with increasing doping, the increase being sharp beyond 4 × 1019 cm-3. These results have been explained as being the result of the Burstein shift and the band-gap shrinkage.

Item Type:Article
Source:Copyright of this article belongs to Indian Academy of Sciences.
Keywords:Photoluminescence; Heavy Doping Effects; Burstein Shift; Band-gap Shrinkage
ID Code:5789
Deposited On:19 Oct 2010 10:56
Last Modified:16 May 2016 16:14

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