Roy, J. N. ; Basu, S. ; Bose, D. N. (1981) Low temperature growth of polycrystalline indium phosphide Solar Energy Materials, 5 (4). pp. 379-382. ISSN 0165-1633
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/016516...
Related URL: http://dx.doi.org/10.1016/0165-1633(81)90072-1
Abstract
A new method for the growth of polycrystalline InP at low temperature (500° C) is reported using iodide formation as an intermediate step. X-ray diffraction studies showed clearly the formation of InP, with grain size 10-20 µm as determined by SEM. The material has also been characterised using resistivity. Hall effect and photovoltage measurements which showed a carrier concentration of 2 × 1016cm-3, electron mobility of 27.9 cm2/V s and a band gap of 1.28 eV at 300 K.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 5778 |
| Deposited On: | 19 Oct 2010 10:59 |
| Last Modified: | 23 May 2011 04:29 |
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