Bose, D. N. ; Sen, S. ; Joshi, D. K. ; Vaidya, S. N. (1982) Resistivity studies on Ga2Te3 and In2Te3 under high pressures Materials Letters, 1 (2). pp. 61-63. ISSN 0167-577X
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/016757...
Related URL: http://dx.doi.org/10.1016/0167-577X(82)90007-6
Abstract
The resistivities of III-VI semiconductors Ga2Te3 and In2Te3 were found to decrease abruptly under hydrostatic pressures between 1 and 7 GPa. The transition was reversible for Ga2Te3 but irreversible in the case of In2Te3 due to decomposition. These results are compared with the behaviour of II-VI and III-V semiconductors and transition pressures correlated with lattice constants.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Materials Research Society. |
| ID Code: | 5775 |
| Deposited On: | 19 Oct 2010 11:00 |
| Last Modified: | 23 May 2011 04:28 |
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