InGaAs p-i-n photodiodes for fibre-optic communication

Bose, D. N. ; Kumar, Arvind (1992) InGaAs p-i-n photodiodes for fibre-optic communication Sadhana (Academy Proceedings in Engineering Sciences), 17 (3-4). pp. 385-389. ISSN 0256-2499

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High purity layers of In1-xGaxAs have been grown by liquid phase epitaxy using a novel impurity gettering technique with rare earth atoms. The electron concentration could thus be decreased from 3 × 1018 cm-3 to 2.4 × 1015 cm-3 and the mobility increased from 7110 cm2/Vs to 18,981 cm2/Vs (100 K). The excellent quality of the layers has been evidenced by X-ray diffraction and photoluminescence measurements. The fabrication of p-i-n photodiodes using this technique is described and reliability aspects addressed.

Item Type:Article
Source:Copyright of this article belongs to Indian Academy of Sciences.
Keywords:Liquid Phase Epitaxy; Photodiodes; InGaAs; Fibre-optic Detector
ID Code:5773
Deposited On:19 Oct 2010 11:01
Last Modified:16 May 2016 16:13

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