Pal, R. ; Singh, M. ; Murlidharan, R. ; Agarwal, S. K. ; Pal, D. ; Bose, D. N. (1998) Lattice mismatch and surface morphology studies of InxGa1-xAs epilayers grown on GaAs substrates Bulletin of Materials Science, 21 (4). pp. 313-316. ISSN 0250-4707
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Official URL: http://www.ias.ac.in/j_archive/bms/21/4/313-316/vi...
Related URL: http://dx.doi.org/10.1007/BF02744959
Abstract
InxGa1-x As (0·06 ≤ x ≤ 0·35) epilayers were grown on GaAs substrates by atmospheric pressure metal organic chemical vapour deposition technique. Surface morphology and lattice mismatch in the InGaAs/GaAs films of different compositions were studied. Cross-hatched patterns were observed on the surface of the epilayers for bulk alloy composition up to x ≈ 0·25. For x>0·3, a rough textured surface morphology was observed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Indian Academy of Sciences. |
| Keywords: | Epitaxial Layer; Metal Organic Chemical Vapour Deposition; InGaAs; Lattice Mismatch |
| ID Code: | 5739 |
| Deposited On: | 19 Oct 2010 11:12 |
| Last Modified: | 16 May 2016 16:11 |
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