Schottky barriers on single-crystal indium telluride

Abstract

Schottky barriers on single-crystal p-In₂Te₃ were formed with evaporated films of materials Al, Ag and Cu with work-functions Ø_M<(E_g+x_s) while Au, Ni and Pd films with larger Ø _M produced ohmic contacts. The barrier heights were found to be 0.72, 0.67 and 0.69 eV respectively, while the ideality factors were 1.15, 3.48 and 6.54. The interface index s was 0.16 compared with the theoretical value of 0.146, its small magnitude indicating the covalent nature of the semiconductor. Barriers on n-In₂Te₃ showed Ø _bn + Ø_bp = 1.29 eV compared with E_g = 1.12 eV. A surface-state rather than a chemical bonding theory provided a satisfactory explanation of the results.