Schottky barriers on single-crystal indium telluride

Sen, S. ; Bose, D. N. (1983) Schottky barriers on single-crystal indium telluride Solid State Electronics, 26 (8). pp. 757-759. ISSN 0038-1101

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Schottky barriers on single-crystal p-In2Te3 were formed with evaporated films of materials Al, Ag and Cu with work-functions ØM<(Eg+xs) while Au, Ni and Pd films with larger Ø M produced ohmic contacts. The barrier heights were found to be 0.72, 0.67 and 0.69 eV respectively, while the ideality factors were 1.15, 3.48 and 6.54. The interface index s was 0.16 compared with the theoretical value of 0.146, its small magnitude indicating the covalent nature of the semiconductor. Barriers on n-In2Te3 showed Ø bn + Øbp = 1.29 eV compared with Eg = 1.12 eV. A surface-state rather than a chemical bonding theory provided a satisfactory explanation of the results.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:5737
Deposited On:19 Oct 2010 11:14
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