Paul, T. K. ; Bhattacharya, P. ; Bose, D. N. (1989) Laser-assisted deposition of bn films on InP for MIS applications Electronics Letters, 25 (23). pp. 1602-1603. ISSN 0013-5194
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Official URL: http://scitation.aip.org/getabs/servlet/GetabsServ...
Related URL: http://dx.doi.org/10.1049/el:19891075
Abstract
Thin films of boron nitride (500-1000Å) were deposited on InP using a Q-switched ruby laser. Films were found to have a dielectric constant of 3.28, resistivity of 5× 1011 Ω cm and bandgap of 4.1 eV. The minimum interface state density for the Al/BN/InP system was 6.2 × 1010 cm-2 eV-1, 0.5 below the conduction band.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institution of Engineering and Technology. |
| ID Code: | 5730 |
| Deposited On: | 19 Oct 2010 11:18 |
| Last Modified: | 20 May 2011 10:40 |
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