Govindacharyulu, P. A. ; Bose, D. N. (1977) Drift mobility of holes in single-crystal β-AgI Journal of Applied Physics, 48 (3). pp. 1381-1382. ISSN 0021-8979
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Official URL: http://jap.aip.org/japiau/v48/i3/p1381_s1?isAuthor...
Related URL: http://dx.doi.org/10.1063/1.323742
Abstract
The drift mobility of photoexcited holes in single-crystal β -AgI has been measured between 260 and 312° K. In this range the drift mobility µ d increased with temperature due to trap-limited behavior. At 300° K µ d=12 cm2/Vsec, the concentration and energy of the dominant traps being given by Nt=3× 109 to 5× 109/cm3 and Et=0.52 to 0.50 eV, respectively. Electron drift mobilities could not be determined due to low electron lifetimes.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 5728 |
| Deposited On: | 19 Oct 2010 11:18 |
| Last Modified: | 23 May 2011 04:35 |
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