Microwave modulation by amorphous-semiconductor switches

Bose, D. N. ; Jani, B. J. (1977) Microwave modulation by amorphous-semiconductor switches Electronics Letters, 13 (16). pp. 451-452. ISSN 0013-5194

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Official URL: http://dx.doi.org/10.1049/el:19770325

Related URL: http://dx.doi.org/10.1049/el:19770325


Microwave modulation has been achieved by using thin-film amorphous-semiconductor switches made of ternary chalcogenides. X-band microwaves were modulated by a threshold switch at frequencies varying from 100 Hz to 1 MHz, with modulation efficiencies comparable to silicon p-i-n diodes. The insertion loss was 0.5 to 0.6 dB and the isolation was 18 dB at 100 mA operating current. Possible applications this method are discussed.

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