Bose, D. N. ; Jani, B. J. (1977) Microwave modulation by amorphous-semiconductor switches Electronics Letters, 13 (16). pp. 451-452. ISSN 0013-5194
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Official URL: http://dx.doi.org/10.1049/el:19770325
Related URL: http://dx.doi.org/10.1049/el:19770325
Abstract
Microwave modulation has been achieved by using thin-film amorphous-semiconductor switches made of ternary chalcogenides. X-band microwaves were modulated by a threshold switch at frequencies varying from 100 Hz to 1 MHz, with modulation efficiencies comparable to silicon p-i-n diodes. The insertion loss was 0.5 to 0.6 dB and the isolation was 18 dB at 100 mA operating current. Possible applications this method are discussed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The Institution of Electrical Engineers. |
| ID Code: | 5726 |
| Deposited On: | 19 Oct 2010 11:19 |
| Last Modified: | 23 May 2011 04:33 |
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