Ali, S. T. ; Kumar, A. ; Bose, D. N. (1995) Schottky barrier height enhancement on n-Ino.53Gao.47As by (NH4)2Sx surface treatment Journal of Materials Science, 30 (19). pp. 5031-5035. ISSN 0022-2461
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Official URL: http://www.springerlink.com/content/wkv54102923482...
Related URL: http://dx.doi.org/10.1007/BF01154518
Abstract
(NH4)2S x Surface treatment was found to increase the barrier height (∅ Bn) for Au/In0.53Ga0.47As Schottky junctions from 0.26 eV to 0.58 eV at 300 K as determined from Richardson plots. The ideality factorn thus decreased from 2.7 to 1.6 and the reverse saturation current densityJ 0 from 9.4 Acm-2 to 3.4×10-5A cm-2. The values of the effective Richardson constant were also evaluated. The chemical state of In0.53Ga0.47As surfaces before and after (NH4)2Sx modification, examined by X-ray photoelectron spectroscopy (XPS), indicated bond formation of S with In, Ga and As.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Springer-Verlag. |
| ID Code: | 5724 |
| Deposited On: | 19 Oct 2010 11:19 |
| Last Modified: | 20 May 2011 05:46 |
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