Deep level transient spectroscopy of anisotropic semiconductor GaTe

Abstract

Deep level transient spectroscopy (DLTS) was carried out on single crystals of the layered chalcogenide p-GaTe using Schottky barriers parallel and perpendicular to the layer planes to study the possible anisotropy of the defect levels. Deep levels with the same energies (0.28 eV and 0.42-0.45eV) have been found in both directions with concentrations ranging from 10¹³cm^-3 to 10¹⁴cm^-3 and capture cross-sections from 10^-15cm² to 10^-17cm². The difference in the spectra obtained from the two planes and the possible reason for the deep level energies being independent of crystal orientation are discussed.