Characterization of chemically modified CdTe surfaces

Bose, D. N. ; Basu, S. ; Mandal, K. C. (1988) Characterization of chemically modified CdTe surfaces Thin Solid Films, 164 . pp. 13-19. ISSN 0040-6090

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Chemical modification of CdTe by ruthenium ions has been shown to reduce the surface recombination velocity and thus increase the effective diffusion length of minority carriers. X-ray photoelectron spectroscopy, secondary ion mass spectrometry and Raman scattering measurements have been used to examine the physical nature of the surface layers, showing the presence of a thin layer of tellurium on unmodified surfaces, which is replaced by a thicker layer of TeO2 on modification. Electrochemical photocapacitance spectroscopy demonstrates directly the removal of mid-gap states and the creation of band-edge states on matte etching and Ru modification.

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