Bose, D. N. ; De Purkayastha, S. ; Mukherjee, J. K. (1980) The influence of the substrate temperature on the preparation of thin film In2Te3 Thin Solid Films, 74 (2). pp. 219-222. ISSN 0040-6090
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/004060...
Related URL: http://dx.doi.org/10.1016/0040-6090(80)90084-X
Abstract
An optimum substrate temperature To of 453 K was found for the preparation of thin film In2Te3 by electron beam evaporation. Films prepared at this temperature are stoichiometric and exhibit a maximum hole mobility of 48 cm2 V-1s-1 and a maximum hole concentration of 4.2 × 1018 cm-3. These observations can be explained on the basis of the Vincett-Barlow-Roberts theory which predicts a value for To/Tb, where Tb is the boiling point, of 0.3. The electrical activation energies of the films were also determined and are discussed in terms of the possible defects present.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 5657 |
| Deposited On: | 19 Oct 2010 11:37 |
| Last Modified: | 23 May 2011 04:30 |
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