Excitonic resonance raman scattering from optic polar phonons in AgGaS2

Deb, S. K. ; Roy, A. P. (1994) Excitonic resonance raman scattering from optic polar phonons in AgGaS2 Solid State Communications, 90 (1). pp. 7-11. ISSN 0038-1098

Full text not available from this repository.

Official URL: http://linkinghub.elsevier.com/retrieve/pii/003810...

Related URL: http://dx.doi.org/10.1016/0038-1098(94)90952-0

Abstract

The low temperature optical properties of the chalcopyrite semiconductor AgGaS2 is dominated by well defined excitonic level. We report here exciton mediated resonance Raman scattering from B2(LO) and E(LO) polar phonons at 235 cm−1 and 230 cm−1 respectively as a function of temperature over 20K to 200K. The variation resonance enhancement of these modes with temperature could be explained assuming an exciton width of the form Γ (T)=a + bT +c T2 ie, the exciton decaying into one and two acoustic phonons. The agreement between the experiment and theory is very good. We also argue that the enhancement is due to Frohlich forbidden LO phonon-exciton coupling.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:56505
Deposited On:24 Aug 2011 11:24
Last Modified:24 Aug 2011 11:24

Repository Staff Only: item control page