Large grain polycrystalline silicon from rice husk

Bose, D. N. ; Govindacharyulu, P. A. ; Banerjee, H. D. (1982) Large grain polycrystalline silicon from rice husk Solar Energy Materials, 7 (3). pp. 319-321. ISSN 0165-1633

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Rice-husk may constitute a viable alternative raw material for production of solar grade silicon. Powdered silicon obtained by Mg reduction of rice-husk ash was subjected to melting and directional solidification resulting in large-grain (3 × 8 mm2) polycrystalline silicon ingots. The material was found to be p type with resistivity 0.1- 0.3Ω cm within the grains. The hole concentration was 8 × 1017 cm-3 and mobility 69 cm2V-1S-1 as found from Hall effect studies. Steady-state photoconductivity indicated electron life-times greater than 10-6 s which is promising for photovoltaic applications. The conductivity activation energy of 0.045 eV showed that B was the active impurity.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:5648
Deposited On:19 Oct 2010 11:39
Last Modified:23 May 2011 04:28

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