Laser deposition of AlN thin films on InP and GaAs

Bhattacharya, Pijush ; Bose, Dwarka N. (1991) Laser deposition of AlN thin films on InP and GaAs Japanese Journal of Applied Physics, 30 . L1750-L1752. ISSN 0021-4922

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Aluminium nitride thin films (~1000 Å) were deposited by pulsed laser (ruby, 30 ns) evaporation on compound semiconductors GaAs and InP for fabrication of metal-insulator-semiconductor (MIS) diodes. The deposition was carried out with a laser energy density of 2.5 at a rate of 10-11 Å/pulse at ~10-6 Torr, the substrate temperature being 300 K. Low-angle X-ray diffraction showed the films to have a wurtzite structure. The resistivity of the films was 5× 1012 Ω-cm with a breakdown field of 1-2× 106 V-cm. The dielectric constant of the films was in the range of 7.5-7.8. A lower value of interface state density was obtained on InP (~1.8× 1011 cm-2.eV-1) rather than on GaAs (~8× 1011 cm-2.eV-1). These results are compared with earlier studies of laser-deposited BN films on InP.

Item Type:Article
Source:Copyright of this article belongs to Japan Society of Applied Physics.
Keywords:Laser Deposition; AlN Films; Compound Semiconductor; MIS Diodes; Interface States
ID Code:5641
Deposited On:19 Oct 2010 11:40
Last Modified:20 May 2011 05:52

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