Stress-induced competing ferromagnetic and antiferromagnetic orders in epitaxial films of A-type antiferromagnet La0.45Sr0.55MnO3

Muduli, P. K. ; Bose, S. K. ; Budhani, R. C. (2007) Stress-induced competing ferromagnetic and antiferromagnetic orders in epitaxial films of A-type antiferromagnet La0.45Sr0.55MnO3 Journal of Physics: Condensed Matter, 19 (22). 226204_1-226204_14. ISSN 0953-8984

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Official URL: http://iopscience.iop.org/0953-8984/19/22/226204

Related URL: http://dx.doi.org/10.1088/0953-8984/19/22/226204

Abstract

Thin films of La0.45Sr0.55MnO3 grown epitaxially on single-crystal surfaces which offer a tensile lattice mismatch ∈ of 1.7% and 0.47% show properties similar to that of bulk La0.45Sr0.55MnO3 and Nd0.45Sr0.55MnO3 respectively. These results establish a direct correlation between a reduction in lattice expansion and contraction of the lattice by the smaller rare earth ion (Nd). The antiferromagnetic-to-ferromagnetic transition in films with the lower ε shifts to higher temperatures as the strain is relieved with increasing film thickness. The electrical resistivity of these films at Tgt;TN has distinct signatures of polaronic transport whose activation energy drops from ~43 to ~31 meV on releasing the in-plane strain. The polaron activation energy is higher by a factor of two in films of similar thickness grown on the substrate which offers the larger tensile mismatch. These results show a direct correlation between polaron binding energy (E0) and the lattice strain. The release of strain manifested by lengthening of the out-of-plane lattice parameter also makes the Neel state robust. However, an external magnetic field (H) suppresses TN. The resistivity of the sample at this magnetic transition shows a large negative magneto-resistance and a re-entrant metallic state at Tgt;TN in large fields (≥3 T). The drop in polaron activation energy seen with increasing field (dE0/dH~-3.82 meV T-1) suggests a magnetic character of the polarons. The metallic antiferromagnetic state realized in epitaxial thin films of La0.45Sr0.55MnO3 makes it a candidate material for exchange biasing of the manganite-based magnetic tunnel junctions.

Item Type:Article
Source:Copyright of this article belongs to Institute of Physics Publishing.
ID Code:5639
Deposited On:19 Oct 2010 11:41
Last Modified:23 May 2011 07:09

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