Bose, M. ; Basa, D. K. ; Bose, D. N. (2001) Effect of ammonia plasma pretreatment on the plasma enhanced chemical vapor deposited silicon nitride films Materials Letters, 48 (6). pp. 336-341. ISSN 0167-577X
Full text not available from this repository.
Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01675...
Related URL: http://dx.doi.org/10.1016/S0167-577X(00)00323-2
Abstract
Silicon-rich, nearly stoichiometric and nitrogen-rich silicon nitride films have been prepared by the glow-discharge decomposition of silane and ammonia with nitrogen dilution, with and without ammonia plasma pre-treatment of the silicon substrate. A considerable improvement in the silicon nitride/silicon interface, as evident from the large reduction in the minimum interface state density (Dit)min, due to ammonia plasma pretreatment is observed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Materials Research Society. |
| Keywords: | Plasma Nitridation; Silicon Nitride; Films; Insulator Charge Density; Interface Charge Density; Elastic Backscattering |
| ID Code: | 5629 |
| Deposited On: | 19 Oct 2010 11:43 |
| Last Modified: | 19 May 2011 11:54 |
Repository Staff Only: item control page
