Microwave synthesis, single crystal growth and characterization of ZnTe

Bhunia, S. ; Bose, D. N. (1998) Microwave synthesis, single crystal growth and characterization of ZnTe Journal of Crystal Growth, 186 (04). pp. 535-542. ISSN 0022-0248

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00220...

Related URL: http://dx.doi.org/10.1016/S0022-0248(97)00814-2


ZnTe has been synthesized for the first time by microwave heating from high purity Zn and Te and the minimum reaction time determined to be 30 min. Single crystals were grown by modified vertical Bridgman technique from 4% rich Te melt, the growth direction being found to be 1 1 1. XRD showed formation of the zincblende phase with lattice constant 6.106 Å. Inductively coupled plasma (ICP) analysis showed Si, In, Cu, Au and Fe to be the main impurities present at ppm level. Crystals were p-type with resistivity 8.5 Ω cm, hole concentration 1.6× 1016 cm-3 and mobility 46 cm2/V s at 300 K. Mobility was found to vary with temperature as μ p∞ T-2.7 in the range 120-300 K. Photoluminescence (PL) at 10 K showed emission peaks at 2.06, 1.47, 1.33 and 1.05 eV. Thermal quenching of the PL bands has been studied. The samples showed weak photoconductivity due to small minority carrier lifetime. From the temperature dependence of the photoconductive gain, the minority carrier lifetime (tn) has been determined in the temperature range of 80-300 K. Tn was thus found to go through a maximum of 4.5× 10-7 s at 220 K and its variation with temperature is also discussed.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:ZnTe; Microwave; Hall; Photoluminescence; Photoconductivity
ID Code:5628
Deposited On:19 Oct 2010 11:43
Last Modified:19 May 2011 12:01

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