Doping dependence of semiconductor-metal transition in InP at high pressures

Bose, D. N. ; Seishu, B. ; Parthasarathy, G. ; Gopal, E. S. R. (1986) Doping dependence of semiconductor-metal transition in InP at high pressures Proceedings of the Royal Society of London Series A: Mathematical, Physical & Engineering Sciences, 405 (1829). pp. 345-353. ISSN 0962-8444

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The resistivity of selenium-doped n-InP single crystal layers grown by liquid-phase epitaxy with electron concentrations varying from 6.7 × 1018 to 1.8 × 1020 cm-3 has been measured as a function of hydrostatic pressure up to 10 GPa. Semiconductor-metal transitions were observed in each case with a change in resistivity by two to three orders of magnitude. The transition pressure pc decreased monotonically from 7.24 to 5.90 GPa with increasing doping concentration n according to the relation pc = po [1 - k(n/nm)α], where nm is the concentration (per cubic centimetre) of phosphorus donor sites in InP atoms, po is the transition pressure at low doping concentrations, k is a constant and α is an exponent found experimentally to be 0.637. The decrease in pc is considered to be due to increasing internal stress developed at high concentrations of ionized donors. The high-pressure metallic phase had a resistivity (2.02- 6.47) × 10-7Ω cm, with a positive temperature coefficient dependent on doping.

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Source:Copyright of this article belongs to Royal Society Publishing.
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Deposited On:19 Oct 2010 11:43
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