Monte Carlo simulation of nucleation and growth of thin films

Goswami, J. ; Ananthakrishna, G. ; Shivashankar, S. A. (1997) Monte Carlo simulation of nucleation and growth of thin films Bulletin of Materials Science, 20 (6). pp. 823-843. ISSN 0250-4707

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We study thin film growth using a lattice-gas, solid-on-solid model employing the Monte Carlo technique. The model is applied to chemical vapour deposition (CVD) by including the rate of arrival of the precursor molecules and their dissociation. We include several types of migration energies including the edge migration energy which allows the diffusive movement of the monomer along the interface of the growing film, as well as a migration energy which allows for motion transverse to the interface. Several well-known features of thin film growth are mimicked by this model, including some features of thin copper films growth by CVD. Other features reproduced are-compact clusters, fractal-like clusters, Frank-van der Merwe layer-by-layer growth and Volmer-Weber island growth. This method is applicable to film growth both by CVD and by physical vapour deposition (PVD).

Item Type:Article
Source:Copyright of this article belongs to Indian Academy of Sciences.
Keywords:Monte Carlo Simulation; Nucleation; Growth; Thin Films
ID Code:544
Deposited On:21 Sep 2010 11:46
Last Modified:12 May 2011 09:04

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