Bharathi, A. ; Gopinathan, K. P. ; Sundar, C. S. ; Viswanathan, B. (1979) Temperature dependence of positron lifetime in GaAs crystals with defects Pramana - Journal of Physics, 13 (6). pp. 625-636. ISSN 0304-4289
Full text not available from this repository.
Official URL: http://www.ias.ac.in/j_archive/pramana/13/vol13con...
Related URL: http://dx.doi.org/10.1007/BF02846295
Abstract
Positron lifetime has been measured as a function of temperature in Si-doped GaAs single crystals subjected to various heat treatments. Defects produced by these heat treatments trap positrons. In all the GaAs samples containing defects positron lifetime was found to decrease with temperature in the range from 375 K to 16 K. The decrease is explained as due to the decrease in the trapping rate. The trapping rate is mainly controlled by the diffusion of the positron to the trap. The diffusion constant is determined mainly by the scattering from charged Si impurities.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Indian Academy of Sciences. |
| Keywords: | Positron Annihilation; Lifetime; Low Temperature; Gallium Arsenide; Defects; Trapping Model; Diffusion |
| ID Code: | 53260 |
| Deposited On: | 05 Aug 2011 10:30 |
| Last Modified: | 05 Aug 2011 10:30 |
Repository Staff Only: item control page
