SenGupta, A. ; Bhatnagar, A. K. ; Gopinathan, K. P. ; Sundar, C. S. (1993) Annealing of native defects in Te-doped GaAs Solid State Communications, 88 (6). pp. 471-473. ISSN 0038-1098
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0038-1098(93)90616-U
Abstract
Positron lifetime measurements have been performed in GaAs doped with Zn, Sn and Te. Isochronal annealing studies in GaAs heavily doped with Te revealed a significant transition in positron lifetime from 249 ps to 238 ps after 500°C annealing which indicates a configurational change in the donor-vacancy complexes acting as Positron trapping centers.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 53246 |
| Deposited On: | 05 Aug 2011 10:32 |
| Last Modified: | 05 Aug 2011 10:32 |
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