Raman electron paramagnetic resonance in Zn1-xCoxTe and Cd1-xCoxTe

Seong, M. J. ; Alawadhi, H. ; Miotkowski, I. ; Ramdas, A. K. (2001) Raman electron paramagnetic resonance in Zn1-xCoxTe and Cd1-xCoxTe Condensed Matter and Materials Physics, 63 (12). 125208_1-125208_7. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v63/i12/e125208

Related URL: http://dx.doi.org/10.1103/PhysRevB.63.125208

Abstract

Electronic Raman transitions due to the spin flip of the 3d electrons of Co2+ in Zn1-xCoxTe and Cd1-xCoxTe (χ <~0.01) are observed at nωPM=g(Co2+BH with g(Co2+)=2.295± 0.010 and 2.310± 0.002, respectively. The intensity of Raman electron paramagnetic resonance (Raman-EPR) shows strong resonant enhancement when the incident or scattered photon energy coincides with that of a Zeeman component of the free exciton. Under resonant conditions, the Raman spectra display "ZnTe-like" (or "CdTe-like") and "CoTe-like" longitudinal optical (LO) phonons in combination with the spin-flip transitions, a consequence of the Fröhlich interaction. In Zn1-xCoxTe, even the ZnTe-like TO phonon exhibited EPR sidebands but mediated by the deformation potential; the large p− d spin− spin exchange interaction in Co2+-based II-VI diluted magnetic semiconductors is the underlying microscopic mechanism.

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:52367
Deposited On:03 Aug 2011 14:16
Last Modified:03 Aug 2011 14:16

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