Tuning of the metal-insulator transition in iodine incorporated amorphous carbon

Kumari, Latha ; Subramanyam, S. V. (2006) Tuning of the metal-insulator transition in iodine incorporated amorphous carbon Journal of Applied Physics, 99 (9). 096107_1-096107_3. ISSN 0021-8979

Full text not available from this repository.

Official URL: http://jap.aip.org/resource/1/japiau/v99/i9/p09610...

Related URL: http://dx.doi.org/10.1063/1.2194110

Abstract

We present the synthesis and properties of iodine incorporated amorphous carbon films. Optical studies depict a decrease in band gap with variation in iodine content and pyrolysis temperature. Tuning of the metal-insulator transition is achieved by varying the pyrolysis temperature and iodine concentration. Appreciable decrease in magnetoresistance is observed with iodine incorporation, but negative magnetoresistance typical behavior of metallic samples is not witnessed.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Carbon; Iodine; Amorphous Semiconductors; Semiconductor Thin Films; Elemental Semiconductors; Metal-insulator Transition; Energy Gap; Pyrolysis; Magnetoresistance; Semiconductor Growth
ID Code:51427
Deposited On:28 Jul 2011 11:41
Last Modified:28 Jul 2011 11:41

Repository Staff Only: item control page