Arole, V. M. ; Takwale, M. G. ; Bhide, V. G. ; Shaligram, A. D. ; David, S. K. (1989) Hydrogen-induced structural changes in polycrystalline silicon as revealed by positron lifetime spectroscopy Physica Status Solidi A: Applied Research, 111 (2). pp. 457-461. ISSN 1862-6300
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Official URL: http://www3.interscience.wiley.com/journal/1124316...
Related URL: http://dx.doi.org/10.1002/pssa.2211110208
Abstract
Hydrogen passivation of polycrystalline silicon wafer is carried out in order to reduce the deleterious effects of grain boundaries. A systematic variation is made in the process parameters implemented during hydrogen passivation and the results of room temperature resistivity measurements are reported. As an efficient tool to study the structure change, positron lifetime spectroscopic measurements are performed on original and hydrogenated polycrystalline silicon wafers and a systematic correlation is sought between the changes that take place in the electrical and structural properties of polycrystalline silicon water, brought about by hydrogen passivation.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to John Wiley and Sons, Inc. |
| ID Code: | 5090 |
| Deposited On: | 18 Oct 2010 05:07 |
| Last Modified: | 19 May 2011 05:12 |
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