Electrical conduction and phase transitions in vacuum-deposited Cu2-xS films

Rastogi, A. C. ; Salkalachen, Saji ; Bhide, V. G. (1978) Electrical conduction and phase transitions in vacuum-deposited Cu2-xS films Thin Solid Films, 52 (1). pp. 1-10. ISSN 0040-6090

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/004060...

Related URL: http://dx.doi.org/10.1016/0040-6090(78)90249-3


The structure, phase transitions and electrical conductivity of Cu2-xS films deposited by vacuum evaporation at different substrate temperatures were studied. It was found that the deposition parameters significantly affect the composition and the structure of evaporated Cu2-xS films. The stoichiometry changes from copper rich to copper deficient as the substrate temperature is increased. This is explained in terms of the mechanism of growth of the Cu2-xS films. The occurence of phase transitions in these films was studied through measurement of the electrical conductivity as a function of temperature. Films deposited at 300 K exist in the γ phase and undergo a γ →β phase transition at 325K and a β→α a phase transition at 350 K. Films deposited at 400 K exhibit only one phase transition, the β → α a transition at 345K. A very sluggish transition from the orthorhombic to the tetragonal phase of Cu1.96S was observed at 340 K in films deposited at 475 K. These results were corroborated by electron microscope and diffraction studies on annealed Cu2-xS films.

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