Characterization of as-deposited and annealed indium oxide thin films

Rozati, S. M. ; Mirzapour, S ; Takwale, M. G. ; Marathe, B. R. ; Bhide, V. G. (1993) Characterization of as-deposited and annealed indium oxide thin films Materials Chemistry and Physics, 34 (2). pp. 119-122. ISSN 0254-0584

Full text not available from this repository.

Official URL: http://linkinghub.elsevier.com/retrieve/pii/025405...

Related URL: http://dx.doi.org/10.1016/0254-0584(93)90201-V

Abstract

Indium oxide films were deposited by an electron beam evaporation technique on Corning glass substrates at various substrate temperatures ranging from 25 to 300 °C. As-deposited films appeared to be dark or semitransparent; whether they were amorphous or polycrystalline depended on the substrate temperature. In order to obtain good opto-electronic properties, these films were subjected to a heat treatment in air at various temperatures ranging from 250 to 600 °C. The In2O3 film prepared at 25 °C and annealed at 500 °C in air was found to be a good transparent conductor. The optical, electrical and structural properties of films deposited at various substrate temperatures and annealed at various temperatures are discussed.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:5079
Deposited On:18 Oct 2010 05:08
Last Modified:19 May 2011 04:53

Repository Staff Only: item control page