Dependence of effective doping on structural order in hydrogenated amorphous silicon

Dusane, R. O. ; Babras, Suvarna ; Jadkar, S. R. ; Bhide, V. G. (1991) Dependence of effective doping on structural order in hydrogenated amorphous silicon Solid State Communications, 77 (3). pp. 195-197. ISSN 0038-1098

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003810...

Related URL: http://dx.doi.org/10.1016/0038-1098(91)90331-O

Abstract

Electrical and structural measurements have been made on intrinsic and phosphorus doped a-Si¦H films deposited by R.F. glow discharge at different substrate temperatures (Ts) in the range (50-400°C). Effective doping, parameterised as ratio of dark conductivity of the doped film to that of the intrinsic film deposited at the same temperature is maximum around 250°C. Gap state density inferred from DLTS results shows an increase beyond 250°C. The average bond angle deviation Δθ in the amorphous network, is also minimum around 250°C and increases for higher Ts. The results bring out a good correlation between effective doping and the bond angle deviation, an important element of the short range order in the amorphous network.

Item Type:Article
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Deposited On:18 Oct 2010 05:15
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