In situ Raman monitoring of ultrathin Ge films

Kanakaraju, S. ; Sood, A. K. ; Mohan, S. (1998) In situ Raman monitoring of ultrathin Ge films Journal of Applied Physics, 84 (10). pp. 5756-5760. ISSN 0021-8979

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Official URL: http://link.aip.org/link/japiau/v84/i10/p5756/s1

Related URL: http://dx.doi.org/10.1063/1.368866

Abstract

We report the in situ interference enhanced Raman spectroscopy of ultrathin crystalline Ge films grown at 300 °C. The Raman spectra of the films show a peak at ~ 290 cm−1 attributed to the confined optical phonon and a broadband on the low-frequency side at ~ 254 cm−1 for 5 and 10 Å thick films. The latter is attributed to disordered surface with large number of dangling bonds. For thicker films, the low-frequency mode appears at 270 cm−1 assigned to surface optical phonons.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Germanium; Elemental Semiconductors; Semiconductor Thin Films; Vacuum Deposited Coatings; Raman Spectra; Light Interference; Size Effect; Phonon Spectra; Surface Phonons; Dangling Bonds
ID Code:50288
Deposited On:22 Jul 2011 13:50
Last Modified:22 Jul 2011 13:50

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