Structural origin of set-reset processes in Ge₁₅Te₈₃Si₂ glass investigated using in situ Raman scattering and transmission electron microscopy

Abstract

We report here that the structural origin of an easily reversible Ge₁₅Te₈₃Si₂ glass can be a promising candidate for phase change random access memories. In situ Raman scattering studies on Ge₁₅Te₈₃Si₂ sample, undertaken during the amorphous set and reset processes, indicate that the degree of disorder in the glass is reduced from off to set state. It is also found that the local structure of the sample under reset condition is similar to that in the amorphous off state. Electron microscopic studies on switched samples indicate the formation of nanometric sized particles of c-SiTe₂ structure.