Raman and high-pressure photoluminescence studies on porous silicon

Sood, A. K. ; Jayaram, K. ; Victor, D. ; Muthu, S. (1992) Raman and high-pressure photoluminescence studies on porous silicon Journal of Applied Physics, 72 (10). pp. 4963-4965. ISSN 0021-8979

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Official URL: http://jap.aip.org/resource/1/japiau/v72/i10/p4963...

Related URL: http://dx.doi.org/10.1063/1.352066

Abstract

We show that there is no correlation between the blue shift of the visible photoluminescence band and red shift of the Raman phonon line in porous silicon, in contrast to the recently reported results. We also report a drastic red shift of the photoluminescence peak position with pressure up to 6 GPa and show that this is much larger than that of the crystalline silicon. These observations cast doubt on the suggested mechanism of quantum size effects in porous silicon.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Porous Materials; Silicon; Raman Spectra; Photoluminescence; Pressure Effects; Spectral Shift; Phonons; Size Effect; Quantization
ID Code:50283
Deposited On:22 Jul 2011 13:45
Last Modified:18 May 2016 04:38

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