Resonance Raman scattering by optical phonons in GaAs near the E0 band gap

Sood, A. K. ; Kauschke, W. ; Menéndez, J. ; Cardona, M. (1987) Resonance Raman scattering by optical phonons in GaAs near the E0 band gap Physical Review B: Condensed Matter and Materials Physics, 35 (6). pp. 2886-2891. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v35/i6/p2886_1

Related URL: http://dx.doi.org/10.1103/PhysRevB.35.2886

Abstract

We report the resonance of the first-order Raman scattering by longitudinal and transverse optical phonons in GaAs very near to the E0 band gap at 100 K. The resonance enhancement observed at E0 for deformation-potential (TO,LO) and Fröhlich-interaction-induced (LO) scattering is about 100 times larger than calculated for uncorrelated electron-hole pairs. The effect is attributed to the Coulomb correlation of discrete and continuum excitons and agrees with Martin's calculation of these effects. The Faust-Henry coefficient is found to be nearly independent of frequency in the region of our measurements (C=-0.6±0.2).

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Deposited On:22 Jul 2011 13:41
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