Phonon renormalization in doped bilayer graphene

Das, A. ; Chakraborty, B. ; Piscanec, S. ; Pisana, S. ; Sood, A. K. ; Ferrari, A. C. (2009) Phonon renormalization in doped bilayer graphene Physical Review B: Condensed Matter and Materials Physics, 79 (15). 155417_1-155417_7. ISSN 1098-0121

[img]
Preview
PDF - Author Version
669kB

Official URL: http://prb.aps.org/abstract/PRB/v79/i15/e155417

Related URL: http://dx.doi.org/10.1103/PhysRevB.79.155417

Abstract

We report phonon renormalization in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping, as a result of the non-adiabatic Kohn anomaly at the Γ point. The bilayer has two conduction and valence subbands, with splitting dependent on the interlayer coupling. This gives a change of slope in the variation of G peak position with doping, which allows a direct measurement of the interlayer coupling strength.

Item Type:Article
Source:Copyright of this article belongs to American Physical Society.
ID Code:50235
Deposited On:22 Jul 2011 14:02
Last Modified:18 May 2016 04:36

Repository Staff Only: item control page