Aoki, K. ; Sood, A. K. ; Presting, H. ; Cardona, M. (1984) Pressure dependence of the E1 gap in GaSb: resonant Raman technique Solid State Communications, 50 (4). pp. 287-289. ISSN 0038-1098
Full text not available from this repository.
Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0038-1098(84)90370-3
Abstract
A new method to determine the pressure dependence of energy gaps with the help of the diamond anvil cell is reported. The method is based on resonance Raman scattering observed as the gap energies cross the photon energies of several laser line. The technique is illustrated by means of measurements of the pressure dependence of the E1 gap of GaSb up to the phase transition (7.7 Gpa). A sublinear dependence of the E1 gap on pressure and a linear dependence on lattice constant (dE1/dlnV = 4.67 ± 0.1 eV) is obtained. These results are well explained by pseudopotential calculations.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 50220 |
| Deposited On: | 22 Jul 2011 13:36 |
| Last Modified: | 22 Jul 2011 13:36 |
Repository Staff Only: item control page
