Rayleigh surface waves in ultraheavily doped n-Si

Sood, A. K. ; Cardona, M. (1986) Rayleigh surface waves in ultraheavily doped n-Si Solid State Communications, 60 (8). pp. 629-631. ISSN 0038-1098

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Official URL: http://www.sciencedirect.com/science/article/pii/0...

Related URL: http://dx.doi.org/10.1016/0038-1098(86)90256-5


We report the effect of free carriers on the velocity of surface Rayleight waves (SRW) in n-type Si studied by Brillouin scattering. The samples prepared by ion implantation followed by laser annealing have carrier concentrations up to 3 × 1021cm−3. The SRW velocity is observed to decrease significantly on doping (-18% for the heaviest doped sample). The large softening of the velocity can be quantitatively explained on the basis of the decrease of all the three independent elastic constants C11, C12, and C44 in n-Si along with the changes in the density of the doped layer due to the dopant ions.

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ID Code:50216
Deposited On:22 Jul 2011 13:41
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