Response time measurement in flow induced signal generation on semiconductors

Sarkar, Sankha S. ; Ghosh, S. ; Sood, A. K. (2007) Response time measurement in flow induced signal generation on semiconductors Sensors and Actuators A: Physical, 137 (2). pp. 209-212. ISSN 0924-4247

Full text not available from this repository.

Official URL: http://www.sciencedirect.com/science/article/pii/S...

Related URL: http://dx.doi.org/10.1016/j.sna.2007.02.028

Abstract

Measurable electrical signal is generated when a gas flows over a variety of solids, including doped semiconductors, even at the modest speed of a few meters per second. The underlying mechanism is an interesting interplay of Bernoulli's principle and the Seebeck effect. The electrical signal depends on the square of Mach number (M) and is proportional to the Seebeck coefficient (S) of the solids. Here we present experimental estimate of the response time of the signal rise and fall process, i.e. how fast the semiconductor materials respond to a steady flow as soon as it is set on or off. A theoretical model is also presented to understand the process and the dependence of the response time on the nature and physical dimensions of the semiconductor material used and they are compared with the experimental observations.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Seebeck Effect; Bernoulli's Principle; Response Time; Semiconductor; Heat Diffusion
ID Code:50199
Deposited On:22 Jul 2011 13:56
Last Modified:22 Jul 2011 13:56

Repository Staff Only: item control page