Rao, V. J. ; Samuel, V. ; Nageswara Rao, N. B. S. ; Sinha, A. P. B. (1987) Study of the gap states in vacuum-deposited Zn3P2 Schottky barriers using admittance spectroscopy Thin Solid Films, 149 (1). pp. 1-7. ISSN 0040-6090
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0040-6090(87)90243-4
Abstract
Thin film Mg/Zn3P2 Schottky barriers were fabricated and their a.c. small-signal capacitance was analysed. The dependence of the capacitance on the voltage, frequency and temperature of the Zn3P2 Schottky diode can be explained using the model of Schibli and Milnes by considering a dominant deep level. Its energy level, capture cross-section and trap density were experimentally determined using admittance spectroscopy. A single dominant trap level was observed and identified as a hole trap which is 0.5 ± 0.01 eV above the top of the valence band edge. The capture probability CP and the density of the traps were determined and found to be 0.75 ×10−14cm3 s−1 and 0.97×1016cm− respectively.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 48971 |
| Deposited On: | 18 Jul 2011 10:12 |
| Last Modified: | 20 Jul 2011 10:01 |
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