Badrinarayanan, S. ; Sinha, S. ; Sinha, A. P. B. (1986) Evidence for a solid state reaction at the a-Si---SnOx interface: an X-ray photoelectron spectroscopy study Thin Solid Films, 144 (1). pp. 133-137. ISSN 0040-6090
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0040-6090(86)90075-1
Abstract
X-ray photoelectron spectroscopy together with argon ion sputtering were used to investigate the depth distribution of tin and silicon suboxides formed during thermal annealing of an amorphous silicon (a-Si) film vacuum evaporated onto a conducting tin oxide surface. The presence of multicomponent silicon suboxides together with free tin was observed at the a-Si---SnOx interface. The presence of these components is attributed to a solid state reaction between silicon and SnOx.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 48969 |
| Deposited On: | 18 Jul 2011 09:57 |
| Last Modified: | 18 Jul 2011 09:57 |
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