Czochralski growth of (La,Sr)(Al,Ta)O3 single crystal

Tao, D. J. ; Wu, H. X. ; Xu, X. D. ; Yan, R. S. ; Liu, F. Y. ; Sinha, A. P. B. ; Jiang, X. P. ; Hu, H. L. (2003) Czochralski growth of (La,Sr)(Al,Ta)O3 single crystal Optical Materials, 23 (1-2). pp. 425-428. ISSN 0925-3467

Full text not available from this repository.

Official URL: http://www.sciencedirect.com/science/article/pii/S...

Related URL: http://dx.doi.org/10.1016/S0925-3467(02)00332-4

Abstract

Twin-and crack-free single crystals of (La,Sr)(Al,Ta)O3 with mixed-perovskite structure have been grown using the Czochralski method. These new crystals with a typical size of 55 mm in diameter and 50 mm in length are potential substrate candidates for growing large size and epitaxial HTS and GaN films. Their dielectric constant and dielectric loss at room temperature are 23 and 1×10−4, respectively.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:(La,Sr)(Al,Ta)O3; Substrate; Epitaxial Growth
ID Code:48956
Deposited On:12 Oct 2011 12:02
Last Modified:12 Oct 2011 12:02

Repository Staff Only: item control page