Low temperature preparation of stabilized zirconia

Dongare, M. K. ; Sinha, A. P. B. (1984) Low temperature preparation of stabilized zirconia Journal of Materials Science, 19 (1). pp. 49-56. ISSN 0022-2461

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Official URL: http://www.springerlink.com/content/5356n1h4h8175h...

Related URL: http://dx.doi.org/10.1007/BF02403110

Abstract

The preparation of stabilized zirconia by thermal decomposition of metal alkoxides is reported. Formation of stabilized zirconia takes place at 400° C. The a.c. conductivity of the samples has been measured from 400 to 1000° C. The best conductivity is found in ZrO2doped with 15 per cent CaO, which at 400° C is 2.37×10−6 Ω−1 cm−1 and at 1000° C is 1.26×10−2 Ω−1 cm−1, with an activation energy of 1.16eV. Transport number measurements show that stabilized zirconia prepared by this method is purely an oxygen ion conductor.

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