Sampathkumaran, E. V. ; Das, I. ; Hayashi, A. ; Ueda, Y. (1995) Low temperature lattice strain in PrNi2Si2 Solid State Communications, 93 (2). pp. 123-125. ISSN 0038-1098
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003810...
Related URL: http://dx.doi.org/10.1016/0038-1098(95)87002-4
Abstract
The lattice constants, a and c, are reported for the alloys, PrNi2Si2 and GdNi2Si2 in the temperature interval 12-300K. The c parameter for PrNi2Si2 exhibits a distinct drop at 60K indicating the existence of a lattice strain. There is no observable anomaly at 60K in the heat-capacity and electrical resistivity. We attribute this lattice strain to 4f electric quadrupolar effects.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 47306 |
| Deposited On: | 08 Jul 2011 13:01 |
| Last Modified: | 08 Jul 2011 13:01 |
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