Roy, A. ; Chainani, A. ; Sarma, D. D. ; Sood, A. K. (1992) Photoemission study of porous silicon Applied Physics Letters, 61 (14). pp. 1655-1657. ISSN 0003-6951
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Official URL: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arn...
Related URL: http://dx.doi.org/10.1063/1.108442
Abstract
We report x-ray photoelectron spectra from a porous silicon film (PSF) with a photoluminescence peak at 1.8 eV, as a function of argon ion etching time to probe the composition in the surface and the subsurface regions. The results clearly indicate that the surface layer is essentially a fluorine admixed SiO2 phase, while the Si:O:F composition of the subsurface region 2:1:0.2. With the possibility of the existence of hydrogen in this composition it appears that beyond the highly oxidized surface, PSF is a fluorine substituted siloxene derivative, which can be responsible for the visible photoluminescence.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 46374 |
| Deposited On: | 04 Jul 2011 11:41 |
| Last Modified: | 03 Jul 2012 06:34 |
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